Organic electronic device having dimension tolerance between encapsulating layer and metal-containing layer less than or equal to 200 microns

ABSTRACT

Provided are an organic electronic device (OED) and a method of manufacturing the same. The OED may effectively block moisture or oxygen permeating into the OED from an external environment, provide high reliability by increasing a life span and durability of an organic electronic diode, and minimize an align error in a process of attaching a film encapsulating the organic electronic diode to a substrate.

This application is a National Phase Application of InternationalApplication No. PCT/KR2014/004551, filed on May 21, 2014, which claimsthe benefit of Korean Application No. 10-2013-0057309, filed May 21,2013, which are hereby incorporated by reference in their entirety forall purposes as if fully set forth herein.

BACKGROUND

1. Field of the Invention

The present application relates to an organic electronic device (OED)and a method of manufacturing the same.

2. Discussion of Art

An OED is a device including an organic material layer generatingexchange of charges using holes and electrons, and may be, for example,a photovoltaic device, a rectifier, a transmitter, and an organic lightemitting diode (OLED).

An OLED among the OEDs consumes less power and has a higher responsespeed than conventional light sources, and is preferable as a thindisplay device or light. In addition, the OLED has excellent spaceutilization, and thus is expected to be applied in various fieldsincluding all kinds of portable devices, monitors, notebook computers,and TVs.

To expand commercialization and use of the OLED, the most importantproblem is durability. Organic materials and metal electrodes includedin the OLED are very easily oxidized by external factors such asmoisture. Accordingly, a product including the OLED is very sensitive toenvironmental factors. To solve the above-described problem, anencapsulant for an OED is applied. However, an automatic logisticsprocess for a thin encapsulant is difficult, and failures such as alignerrors highly occur in a process of attaching an encapsulant to a basesubstrate due to a gradually-shorter bezel. Accordingly, a method ofsolving the problems is needed.

SUMMARY OF THE INVENTION

The present application is directed to providing an OED and a method ofencapsulating an OED.

Hereinafter, with reference to the accompanying drawings, exemplaryembodiments of the present application will be described in furtherdetail. In addition, to explain the present application, detaileddescriptions for known general functions or configurations will beomitted. In addition, the accompanying drawings are schematicallyprovided to help in understanding the present application, and to moreclearly explain the present application, parts that do not relate to thedescriptions will be omitted, thicknesses are exaggerated to clearlyexpress several layers and regions, and the scope of the presentapplication is not limited by thicknesses, sizes, and ratios shown inthe drawings.

One aspect of the present application provides an OED. The term “organicelectronic device (OED)” used herein refers to a product or devicehaving a structure including an organic material layer generatingexchange of charges using holes and electrons between a pair ofelectrodes facing each other, and may be, but is not limited to, forexample, a photovoltaic device, a rectifier, a transmitter, and anorganic light emitting diode (OLED). In one exemplary embodiment of thepresent application, the OED may be an OLED.

The present application provides an OED, which includes a substrate, anorganic electronic diode formed on the substrate, and an encapsulationfilm including an encapsulating layer including an encapsulating resinto encapsulate an entire surface of the organic electronic diode and ametal layer formed on the encapsulating layer. In one example, adimension tolerance (d) between the metal layer and the encapsulatinglayer of the encapsulation film may satisfy the following Equation 1:|d|≤200 μm

In Equation 1, d is a difference in distance between an arbitrary sidesurface of the metal layer and a side surface of the encapsulating layercorresponding to the above side surface of the metal layer. As the lowerlimit of the dimension tolerance is smaller, align errors may bereduced. Therefore, the lower limit of the dimension tolerance may be,but is not particularly limited to, 0 μm. The dimension tolerance d maybe, for example, 0 to 200 μm, 0.1 to 190 μm, 0.5 to 180 μm, 0.8 to 170μm, 1 to 160 μm, 1 to 150 μm, 1 to 140 μm, 1.5 to 130 μm, 2 to 120 μm, 2to 110 μm, or 2 to 100 μm. As the difference in distance between theoutermost side surfaces of the metal layer and the encapsulating layeris controlled, probability of failures such as an align error of theencapsulation film undergoing a process performed at a specifictemperature may be minimized.

The encapsulation film may be used to encapsulate an entire surface ofthe organic electronic diode, and includes a metal layer and anencapsulating layer having a monolayer or multilayer structure includingan encapsulating resin. In the present application, as long assatisfying the above-described dimension tolerance d, the structures ofthe metal layer and the encapsulating layer and materials constitutingthese layers are not particularly limited.

The metal layer according to an exemplary embodiment of the presentapplication may be transparent or opaque. A material for or a method offorming the metal layer is not particularly limited as long as itsatisfies the above-described thermal expansion coefficient range. Forexample, the metal layer may be a thin film-type metal foil, or a layerformed by depositing a metal on a polymer base substrate. The metallayer may be any one that can have thermal conductivity and moisturebarrierability. The metal layer may include any one of a metal oxide, ametal nitride, a metal carbide, a metal oxynitride, a metal oxyboride,and a mixture thereof. For example, the metal layer may include a metaloxide such as silicon oxide, aluminum oxide, titanium oxide, indiumoxide, tin oxide, indium tin oxide, tantalum oxide, zirconium oxide,niobium oxide, and a mixture thereof. The metal layer may be depositedby a means for electrolysis, rolling, evaporation, electron beamevaporation, sputtering, reactive sputtering, chemical vapor deposition,plasma chemical vapor deposition, or electron cyclotron resonance sourceplasma chemical vapor deposition. In one exemplary embodiment of thepresent application, the metal layer may be deposited by reactivesputtering.

The metal layer preferably has a thermal conductivity of 50 W/mK ormore, 60 W/mK or more, 70 W/mK or more, 80 W/mK or more, 90 W/mK ormore, 100 W/mK or more, 110 W/mK or more, 120 W/mK or more, 130 W/mK ormore, 140 W/mK or more, 150 W/mK or more, 200 W/mK or more, or 250 W/mKor more. Due to the high thermal conductivity, heat generated at ajunction interface in a metal layer junction process may be more rapidlyemitted. In addition, the high thermal conductivity rapidly emits heataccumulated in operation of an OED to an external atmosphere, and thus atemperature of the OED can be maintained at a lower level, and cracksand failures can be reduced.

The metal layer according to one exemplary embodiment of the presentapplication may include a base substrate. The base substrate may be, butis not limited to, selected from polyethyleneterephthalate,polytetrafluoroethylene, polyethylene, polypropylene, polybutene,polybutadiene, a vinyl chloride copolymer, polyurethane, ethylene-vinylacetate, an ethylene-propylene copolymer, an ethylene-ethyl acrylatecopolymer, an ethylene-methyl acrylate copolymer, polyimide, nylon, anda combination thereof as a polymer resin material. The base substratemay prevent corrosion when in contact with moisture, and damage due tofolding or bending during the process.

The encapsulating layer according to the present application may beformed in a single layer or at least two layers. In one example, theencapsulating layer may have a tensile modulus of 0.001 to 500 MPa atroom temperature. A material for the encapsulating layer according tothe present application is not particularly limited as long as itsatisfies the range of the tensile modulus. The tensile modulus usedherein is a tensile modulus measured at a temperature of 25° C. unlessparticularly defined otherwise. In addition, the tensile modulus usedherein may refer to a tensile modulus of a curable component measuredafter curing unless particularly defined otherwise. In one example, thetensile modulus may refer to a tensile modulus measured after curing atapproximately 100° C. for approximately 120 minutes, a tensile modulusmeasured after radiating UV rays at a radiation dose of approximately 1J/cm² or more, or a tensile modulus measured after thermal curing isadditionally performed after UV radiation.

As described above, the encapsulating layer may have a tensile modulusof 0.001 to 500 MPa at room temperature, and for example, 0.001 to 490Mpa, 0.001 to 480 Mpa, 0.001 to 470 Mpa, 0.001 to 460 Mpa, 0.001 to 450Mpa, 0.001 to 440 Mpa, 0.001 to 430 Mpa, 0.001 to 420 Mpa, 0.001 to 410Mpa, 0.001 to 400 Mpa, 0.05 to 450 Mpa, 0.1 to 450 Mpa, 0.2 to 450 Mpa,0.3 to 450 Mpa, or 0.5 to 450 Mpa. As the tensile modulus of theencapsulating layer is controlled within a specific range, a chance tohave failures such as align errors of the encapsulation film undergoinga process performed at a specific temperature may be minimized.

In one example, when the encapsulating layer is formed in a multilayerstructure, a component constituting each encapsulating layer may be thesame as or different from each other. Here, the component constitutingthe encapsulating layer may be an encapsulating resin, a moistureadsorbent, a curable material, or other additives.

In one example, the encapsulating resin may be a styrene-based resin orelastomer, a polyolefin-based resin or elastomer, other elastomers, apolyoxyalkylene-based resin or elastomer, a polyester-based resin orelastomer, a polyvinylchloride-based resin or elastomer, apolycarbonate-based resin or elastomer, a polyphenylenesulfide-basedresin or elastomer, a mixture of hydrocarbon, a polyamide-based resin orelastomer, an acrylate-based resin or elastomer, an epoxy-based resin orelastomer, a silicon-based resin or elastomer, a fluorine-based resin orelastomer, or a mixture thereof.

Here, the styrene-based resin or elastomer may be, for example, astyrene-ethylene-butadiene-styrene (SEBS) block copolymer, astyrene-isoprene-styrene (SIS) block copolymer, anacrylonitrile-butadiene-styrene (ABS) block copolymer, anacrylonitrile-styrene-acrylate (ASA) block copolymer, astyrene-butadiene-styrene (SBS) block copolymer, a styrene-basedhomopolymer, or a mixture thereof. The olefin-based resin or elastomermay be, for example, a high-density polyethylene-based resin orelastomer, a low-density polyethylene-based resin or elastomer, apolypropylene-based resin or elastomer, or a mixture thereof. Theelastomer may be, for example, an ester-based thermoplastic elastomer,an olefin-based elastomer, a silicon-based elastomer, an acryl-basedelastomer, or a mixture thereof. Among these, the olefin-basedthermoplastic elastomer may be a polybutadiene resin or elastomer or apolyisobutylene resin or elastomer. The polyoxyalkylene-based resin orelastomer may be, for example, a polyoxymethylene-based resin orelastomer, a polyoxyethylene-based resin or elastomer, or a mixturethereof. The polyester-based resin or elastomer may be, for example, apolyethylene terephthalate-based resin or elastomer, a polybutyleneterephthalate-based resin or elastomer, or a mixture thereof. Thepolyvinylchloride-based resin or elastomer may be, for example,polyvinylidene chloride. The mixture of hydrocarbon may be, for example,hexatriacotane or paraffin. The polyamide-based resin or elastomer maybe, for example, nylon. The acrylate-based resin or elastomer may be,for example, polybutyl(meth)acrylate. The epoxy-based resin or elastomermay be, for example, a bisphenol-type such as a bisphenol A-type, abisphenol F-type, a bisphenol S-type, and a hydrogenated productthereof; a novolac-type such as a phenol novolac-type or a cresolnovolac-type; a nitrogen-containing ring-type such as atriglycidylisocyanurate-type or a hydantoin-type; an alicyclic-type; analiphatic-type; an aromatic-type such as a naphthalene-type or abiphenyl-type; a glycidyl-type such as a glycidylether-type, aglycidylamine-type, or a glycidylester-type; a dicyclo-type such as adicyclopentadiene-type; an ester-type; an etherester-type; or a mixturethereof. The silicon-based resin or elastomer may be, for example,polydimethylsiloxane. In addition, the fluorine-based resin or elastomermay be a polytrifluoroethylene resin or elastomer, apolytetrafluoroethylene resin or elastomer, apolychlorotrifluoroethylene resin or elastomer, apolyhexafluoropropylene resin or elastomer, polyvinylidene fluoride,polyvinyl fluoride, polyethylenepropylene fluoride, or a mixturethereof.

The listed resin or elastomer may be grafted with maleic anhydride,copolymerized with a monomer to prepare another listed resin orelastomer, or a resin or an elastomer, or modified by another compound.The compound may be a carboxyl-terminated butadiene-acrylonitrilecopolymer.

In one exemplary embodiment, as the encapsulating resin, a copolymer ofan olefin-based compound including a carbon-carbon double bond may beincluded, but the present application is not limited thereto.

In addition, the encapsulating resin may be a copolymer of a diene andan olefin-based compound including a carbon-carbon double bond. Here,the olefin-based compound may include isobutylene, propylene, orethylene, the diene may be a monomer that can be polymerized with theolefin-based compound, and may include, for example, 1-butene, 2-butene,isoprene, or butadiene. That is, the encapsulating resin of the presentapplication may be, for example, a homopolymer of an isobutylenemonomer; a copolymer prepared by copolymerizing a monomer that can bepolymerized with an isobutylene monomer; or a mixture thereof. In oneexample, a copolymer of an olefin-based compound including acarbon-carbon double bond and a diene may be butyl rubber.

The encapsulating resin may have a weight average molecular weight (Mw)as can be molded in the form of a film. For example, the resin may havea weight average molecular weight (Mw) of approximately 100,000 to2,000,000, 100,000 to 1,500,000, or 100,000 to 1,000,000. The term“weight average molecular weight” refers to a conversion value forstandard polystyrene measured by gel permeation chromatography (GPC).However, the resin or elastomer component may not have theabove-described weight average molecular weight. For example, when themolecular weight of the resin or elastomer component is not in asufficient level to form a film, a separate binder resin may be added toa component constituting an encapsulating layer.

In yet another embodiment, the encapsulating resin may include a curableresin. In one example, components constituting the above-describedencapsulating layer is not particularly limited as long as theencapsulating layer satisfies the tensile modulus or glass transitiontemperature, and may be, for example, a curable resin. In one example,the curable resin may include a component constituting a second layer ofthe encapsulating layer, which will be described below.

A specific kind of the curable resin that can be used in the presentapplication is not particularly limited, and for example, variousheat-curable or photocurable resins known in the art may be used. The“heat-curable resin” used herein refers to a resin that can be cured bysuitable heat application or aging, and the term “photocurable resin”refers to a resin that can be cured by radiation of electromagneticwaves. In addition, here, in the category of the electromagnetic waves,microwaves, IR rays, UV rays, X rays, γ rays. and particle beams such asα-particle beams, proton beams, neutron beams, and electron beams. Inthe present application, as an example of the photocurable resin, acationic photocurable resin may be used. The cationic photocurable resinrefers to a resin that can be cured by cationic polymerization or acationic curing reaction induced by radiation of electromagnetic waves.In addition, the curable resin may be a dual curable resin having bothheat-curing and photocuring characteristics.

A specific kind of a curable resin that can be used in exemplaryembodiments of the present application is not particularly limited, aslong as the curable resin has the above-described characteristics. Forexample, a resin that can be cured to exhibit adhesive characteristicsmay include a resin including at least one heat-curable functional groupselected from a glycidyl group, an isocyanate group, a hydroxyl group, acarboxyl group or an amide group, or at least one functional groupcapable of being cured by the radiation of an electromagnetic wave,selected from an epoxide group, a cyclic ether group, a sulfide group,an acetal group, or a lactone group. In addition, a specific kind of theresin may include an acryl resin, a polyester resin, an isocyanateresin, or an epoxy resin, but the present application is not limitedthereto.

As the curable resin in the present application, an aromatic oraliphatic, or a linear or branched epoxy resin may be used. In oneexemplary embodiment of the present application, as an epoxy resincontaining at least two functional groups, an epoxy resin equivalent of180 to 1,000 g/eq may be used. When the epoxy resin having the aboveepoxy equivalent is used, characteristics such as adhesive performanceand a glass transition temperature of the cured product may beeffectively maintained. Such an epoxy resin may be one or a mixture ofat least two of a cresol novolac epoxy resin, a bisphenol A-type epoxyresin, a bisphenol A-type novolac epoxy resin, a phenol novolac epoxyresin, a 4-functional epoxy resin, a biphenyl-type epoxy resin, atriphenolmethane-type epoxy resin, an alkyl-modified triphenolmethaneepoxy resin, a naphthalene-type epoxy resin, a dicyclopentadiene-typeepoxy resin, and a dicyclopentadiene-modified phenol-type epoxy resin.

In the present application, preferably, an epoxy resin having a cyclicstructure in a molecular structure may be used, and more preferably, anepoxy resin including an aromatic group (for example, a phenyl group)may be used. When the epoxy resin includes an aromatic group, a curedproduct may have excellent thermal and chemical stabilities and a lowabsorbance, thereby enhancing reliability of an encapsulation structureof the OED. A specific example of the epoxy resin containing an aromaticgroup that can be used in the present application may be, but is notlimited to, one or a mixture of at least two of a biphenyl-type epoxyresin, a dicyclopentadiene-type epoxy resin, a naphthalene-type epoxyresin, a dicyclopentadiene-modified phenol-type epoxy resin, acresol-based epoxy resin, a bisphenol-based epoxy resin, a xyloc-basedepoxy resin, a multifunctional epoxy resin, a phenol novolac epoxyresin, a triphenolmethane-type epoxy resin, and an alkyl-modifiedtriphenolmethane epoxy resin.

In the present application, for example, the epoxy resin is asilane-modified epoxy resin, and for example, a silane-modified epoxyresin having an aromatic group. Likewise, when an epoxy resin modifiedwith a silane to structurally have a silane group is used, an adhesiveproperty of the OED to a glass substrate or a substrate inorganicmaterial is maximized, and a moisture barrierability or durability andreliability may be enhanced. Such a specific kind of the epoxy resinthat can be used in the present application is not particularly limited,and the resin may be easily obtained from a manufacturer, for example,Kukdo Chemical, Co., Ltd.

As described above, the encapsulating layer may include a single layeror a multiple layer having at least two layers. When the encapsulatinglayer is formed in a single layer, a tensile modulus of theencapsulating layer is as described above. In addition, when theencapsulating layer is formed of at least two layers, at least one layermay have a tensile modulus of 0.001 to 500 MPa at room temperature. Inaddition, when the encapsulating layer includes at least two layers, theencapsulating layer may include a first layer having a tensile modulusof 0.001 to 500 MPa at room temperature, and a second layer having atensile modulus of 500 to 1000 MPa at room temperature. When an organicelectronic diode is encapsulated with at least two layers, a stackedsequence is not particularly limited, but a layer including or notincluding a small amount of a moisture adsorbent that will be describedbelow may be in contact with the organic electronic diode.

In an exemplary embodiment of the present application, the encapsulatinglayer may further include a moisture adsorbent. The term “moistureadsorbent” may refers to any component that can absorb or removemoisture or vapor permeating from an external environment through aphysical or chemical reaction. That is, the moisture adsorbent means amoisture reactive or physical adsorbent, or a mixture thereof.

The moisture reactive adsorbent chemically reacts with vapor, moisture,or oxygen permeating into the encapsulating layer to absorb moisture orvapor. The physical adsorbent may extend a path of moisture or vaporpermeating into the encapsulation structure to prevent the permeation,and maximize barrierability to moisture and vapor through a matrixstructure of the encapsulating resin and an interaction with themoisture reactive adsorbent.

A specific kind of the moisture adsorbent that can be used in thepresent application may be, but is not particularly limited to, one or amixture of at least two of metal powder such as alumina, a metal oxide,a metal salt, or phosphorus pentoxide (P₂O₅) in the case of the moisturereactive adsorbent, and silica, zeolite, titania, zirconia, ormontmorillonite in the case of the physical adsorbent.

Here, specifically, the metal oxide may be phosphorus pentoxide (P₂O₅),lithium oxide (Li₂O), sodium oxide (Na₂O), barium oxide (BaO), calciumoxide (CaO), or magnesium oxide (MgO), and the metal salt may be, but isnot limited to, a sulfate such as lithium sulfate (Li₂SO₄), sodiumsulfate (Na₂SO₄), calcium sulfate (CaSO₄), magnesium sulfate (MgSO₄),cobalt sulfate (CoSO₄), gallium sulfate (Ga₂(SO₄)₃), titanium sulfate(Ti(SO₄)₂), or nickel sulfate (NiSO₄); a metal halide such as calciumchloride (CaCl₂), magnesium chloride (MgCl₂), strontium chloride(SrCl₂), yttrium chloride (YCl₃), copper chloride (CuCl₂), cesiumfluoride (CsF), tantalum fluoride (TaF₅), niobium fluoride (NbF₅),lithium bromide (LiBr), calcium bromide (CaBr₂), cesium bromide (CeBr₃),selenium bromide (SeBr₄), vanadium bromide (VBr₃), magnesium bromide(MgBr₂), barium iodide (BaI₂), or magnesium iodide (MgI₂); or a metalchlorate such as barium perchlorate (Ba(ClO₄)₂) or magnesium perchlorate(Mg(ClO₄)₂).

In the present application, the moisture adsorbent such as the metaloxide may be suitably processed, and added to the composition. Forexample, depending on the kind of the OED to which the encapsulationfilm is applied, the encapsulating layer may be a thin film having athickness of 30 μm or less, and in this case, a grinding process of themoisture adsorbent may be needed. To grind the moisture adsorbent,three-roll milling, bead milling, or ball milling may be used. Inaddition, when the encapsulation film of the present application is usedin a top-emissive OED, a permeability of the encapsulating layer is veryimportant, and thus the moisture adsorbent should have a small size.Accordingly, for such a use, the grinding process may also be needed.

The encapsulating layer of the present application may include amoisture adsorbent at 1 to 100 parts by weight, and preferably 5 to 50parts by weight relative to 100 parts by weight of the encapsulatingresin. As the content of the moisture adsorbent is controlled to 5 partsby weight or more, the encapsulating layer may exhibit excellentmoisture and vapor preventabilities. In addition, as the content of themoisture adsorbent is controlled to 50 parts by weight or less, theencapsulating layer may be formed in a thin film having an encapsulationstructure, and exhibit excellent moisture barrierability. However, thecontent range may be suitably controlled according to a location of theencapsulating layer without particular limitation. For example, themoisture adsorbent in a region of the encapsulating layer, which isclose to the OED may be included in a smaller amount, and may beincluded at 0 to 20% based on a total amount of the moisture adsorbent.When the content is more than 20%, the moisture adsorbent may induce aphysical damage by pressing the OED along with impurities, and induce achemical damage to a negative electrode or an inorganic protective layerdue to an excessive amount of ionic materials released after thereaction with moisture.

In the specification, unless particularly defined otherwise, the unit“parts by weight” means a weight ratio between components.

In an exemplary embodiment of the present application, the encapsulatinglayer may further include a tackifier according to the kind of theencapsulating resin. For example, the encapsulating layer may furtherinclude a tackifier, in addition to the above-described encapsulatingresin. The tackifier may be, for example, a hydrogenated petroleum resinobtained by hydrogenating a petroleum resin. The hydrogenated petroleumresin may be partially or completely hydrogenated, and may be a mixtureof such resins. Such a tackifier may have high compatibility with acomponent constituting the encapsulating layer and an excellent moisturebarrierability. The specific hydrogenated petroleum resin may be ahydrogenated terpene-based resin, a hydrogenated ester-based resin, or ahydrogenated dicyclopentadiene-based resin. The tackifier may have aweight average molecular weight of approximately 200 to 5,000. A contentof the tackifier may be suitably controlled as needed. For example, thetackifier may be included in a first layer at 5 to 100 parts by weightrelative to 100 parts by weight of the encapsulating resin.

The encapsulating layer may include various additives according to a useof the film and a process of manufacturing a film, in addition to theabove-described components. For example, in consideration of durabilityand processability, a curable material may be further included in theencapsulating layer. Here, the curable material may mean a materialhaving a heat-curable functional group and/or an active energy raycurable functional group separately included in addition to thecomponents constituting the encapsulating layer. In addition, a contentof the curable material included in the encapsulating layer may becontrolled according to a desired physical property of the film.

In an exemplary embodiment of the present application, the encapsulatinglayer may further include a curing agent according to the kind of theencapsulating resin. For example, through a reaction with theabove-described encapsulating resin, a curing agent that may form acrosslinking structure or an initiator that may initiate a curingreaction of the resin may further be included.

A suitable kind of the curing agent may be selected and used dependingon the kind of the encapsulating resin or a functional group included inthe resin.

In one example, when the encapsulating resin is an epoxy resin, as thecuring agent, a curing agent of an epoxy resin known in the art, forexample, at least one or two of an amine curing agent, an imidazolecuring agent, a phenol curing agent, a phosphorus curing agent, and anacid anhydride curing agent may be used, but the present application isnot limited.

In one example, as the curing agent, an imidazole compound which is asolid at room temperature and has a melting point or degradationtemperature of 80° C. or more may be used. The compound may be, but isnot limited to, for example, 2-methyl imidazole, 2-heptadecyl imidazole,2-phenyl imidazole, 2-phenyl-4-methyl imidazole, or1-cyanoethyl-2-phenyl imidazole.

A content of the curing agent may be selected according to, for example,a kind or ratio of the encapsulating resin. For example, the curingagent may be included at 1 to 20 parts by weight, 1 to 10 parts byweight, or 1 to 5 parts by weight relative to 100 parts by weight of theencapsulating resin. However, the weight ratio may be changed accordingto a kind and ratio of the encapsulating resin or a functional groupthereof, or a crosslinking density to be realized.

When the encapsulating resin is a resin that may be cured by radiationof active energy rays, as an initiator, for example, a cationicphotopolymerization initiator may be used.

As the cationic photopolymerization initiator, an onium salt- ororganometallic salt-series ionized cationic initiator, or an organicsilane- or latent sulfonic acid-series ionized cationicphotopolymerization initiator, or non-ionized cationicphotopolymerization initiator may be used. The onium salt-seriesinitiator may be a diaryliodonium salt, a triarylsulfonium salt, or anaryldiazonium salt, the organometallic salt-series initiator may be ironarene, the organic silane-series initiator may be o-nitrobenzyl triarylsilyl ether, triaryl silyl peroxide, or acyl silane, and the latentsulfonic acid-series initiator may be α-sulfonyloxy ketone orα-hydroxymethylbenzoin sulfonate, but the present application is notlimited thereto.

In one example, as the cationic initiator, an ionized cationicphotopolymerization initiator may be used.

In addition, when the encapsulating resin is a resin that may be curedby radiation of active energy rays, as the initiator, for example, aradical initiator may be used.

The radical initiator may be a photoinitiator or a thermal initiator. Aspecific kind of the photoinitiator may be suitably selected inconsideration of a curing speed and yellowing probability. For example,the photoinitiator may be a benzoin-, hydroxy ketone-, amino ketone-, orphosphine oxide-based photoinitiator, and specifically, benzoin, benzoinmethylether, benzoin ethylether, benzoin isopropylether, benzoinn-butylether, benzoin isobutylether, acetophenone, dimethylaminoacetophenone, 2,2-dimethoxy-2-phenylacetophenone,2,2-diethoxy-2-phenylacetophenone,2-hydroxy-2-methyl-1-phenylpropane-1-one, 1-hydroxycyclohexylphenylketone,2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propane-1-one,4-(2-hydroxyethoxy)phenyl-2-(hydroxy-2-propyl)ketone, benzophenone,p-phenylbenzophenone, 4,4′-diethylamino benzophenone,dichlorobenzophenone, 2-methylanthraquinone, 2-ethylanthraquinone,2-t-butylanthraquinone, 2-amino anthraquinone, 2-methylthioxanthone,2-ethylthioxanthone, 2-chlorothioxanthone, 2,4-dimethylthioxanthone,2,4-diethylthioxanthone, benzyldimethylketal, acetophenonedimethylketal, p-dimethylamino benzoic acid ester, oligo[2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone], or2,4,6-trimethylbenzoyl-diphenyl-phosphineoxide.

A content of the initiator, like the curing agent, may be changedaccording to the kind and ratio of the encapsulating resin or afunctional group of the resin, or a crosslinking density to be realized.For example, the initiator may be included at 0.01 to 10 parts by weightor 0.1 to 3 parts by weight relative to 100 parts by weight of theencapsulating resin. When the content of the initiator is too small,curing may not sufficiently occur, and when the content of the initiatoris too large, a content of an ionic material is increased after curingto deteriorate durability of an adhesive, or due to the characteristicof the initiator, a conjugate acid is formed, which is disadvantageousin terms of optical durability, and corrosion may occur according to abase substrate, thereby selecting a suitable content range inconsideration of such a problem.

The encapsulating layer may include various materials according to a useof the film and a process of manufacturing a film. For example, when theencapsulating layer is molded in a film or sheet type, in considerationof moldability, a binder resin may be included in the encapsulatinglayer.

In one exemplary embodiment of the present application, theencapsulating layer may include a filler, and preferably, an inorganicfiller. The filler may extend a path of moisture or vapor permeatinginto the encapsulation structure to prevent the permeation, and maximizebarrierability to moisture and vapor through an interaction with theencapsulating resin and the moisture adsorbent. A specific kind of thefiller that can be used in the present application may be, but is notparticularly limited to, for example, one or a mixture of at least twoof clay, talc, and needle-like silica.

In the present application, to increase a binding efficiency between afiller and an organic binder, as the filler, a product which issurface-treated with an organic material may be used, or a couplingagent may be further added.

The encapsulating layer of the present application may include a fillerat 1 to 50 parts by weight, and preferably 1 to 20 parts by weight,relative to 100 parts by weight of the encapsulating resin. As thecontent of the filler is controlled to 1 part by weight or more, a curedproduct having an excellent moisture or vapor blocking property andexcellent mechanical properties may be provided. In addition, in thepresent application, as the content of the filler is controlled to 50parts by weight or less, a film-type encapsulating layer can bemanufactured, and although the encapsulating layer is formed in a thinfilm, an encapsulation structure exhibiting an excellent moistureblocking characteristic may be provided.

In the present application, the organic electronic diode may be an OLED.

The OED may further include a protective film between the encapsulationfilm and the organic electronic diode to protect the organic electronicdiode.

In one example, as shown in FIG. 1, the OED may be disposed such that anencapsulating layer 12 of an encapsulation film 14 is in contact with anorganic electronic diode 22 and a substrate 21. In addition, a metallayer 13 may be disposed on the encapsulating layer 12. In addition, inFIG. 2, the encapsulating layer 12 may include a first layer 12 a and asecond layer 12 b.

Yet another aspect of the present application provides a method ofmanufacturing an OED, which includes applying an encapsulation filmincluding an encapsulating layer including an encapsulating resin and ametal layer formed on the encapsulating layer to a substrate on which anorganic electronic diode is formed to encapsulate an entire surface ofthe organic electronic diode, and curing the encapsulating layer of theencapsulation film.

A dimension tolerance d between the metal layer and the encapsulatinglayer of the encapsulation film may satisfy Equation 1.|d|≤200 μm

In Equation 1, d is a difference in distance between an arbitrary sidesurface of the metal layer and a side surface of the encapsulating layercorresponding to the above side surface of the metal layer.

The encapsulation film may be applied to the organic electronic diode byhot roll lamination, hot pressing, or vacuum pressing of theencapsulation film, but the present application is not particularlylimited thereto.

In the present application, according to the method of manufacturing anorganic electronic diode, for example, a transparent electrode is formedon the substrate such as a glass or a polymer film by vacuum depositionor sputtering, and an organic material layer is formed on thetransparent electrode. The organic material layer may include a holeinjection layer, a hole transport layer, an emitting layer, an electroninjection layer, and/or an electron transport layer. Subsequently, asecond electrode is further formed on the organic material layer.Afterward, the above-described encapsulation film 14 is applied to a topsurface of the organic electronic diode 22 on the substrate 21 to coveran entire surface of the organic electronic diode 22. Here, a method ofapplying the encapsulation film 14 may be, but is not particularlylimited to, a method of applying the encapsulation film of the presentapplication to a top surface of the organic electronic diode 22 formedon the substrate 21 through heating, pressing, or autoclaving.

In addition, an additional curing process or adhesion-enhancing processto the encapsulation film 14 to which the organic electronic diode 22 ispressed may be performed, and such a process (main curing) may beperformed, for example, in a heating chamber. A curing condition in themain curing may be suitably selected in consideration of stability ofthe organic electronic diode 22.

However, the above-described forming process is merely an example forencapsulating the organic electronic diode 22, and thus a sequence of orcondition for the process may be freely changed. In addition, after aprotective layer is formed on the organic electronic diode 22, theencapsulation film may be applied and then cured.

EFFECTS

An OED of the present application can effectively block moisture oroxygen permeating into the OED from an external environment, providehigh reliability due to increases in a lifespan and durability of anorganic electronic diode, and minimize an align error in a process ofattaching a film to a substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 to 2 are cross-sectional views of an OED according to anexemplary embodiment of the present application.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, the present invention will be described in further detailwith reference to Examples according to the present invention andComparative Examples not according to the present invention, but thescope of the present invention is not limited to the following Examples.

Example 1

(1) Preparation of Encapsulating Layer

A moisture adsorbent solution was prepared by adding 100 g of calcineddolomite as a moisture adsorbent and toluene as a solvent to have asolid content of 50 wt %. 50 g of a polyisobutene resin (weight averagemolecular weight: 450,000) as an encapsulating resin of a first layer,and 50 g of a hydrogenated dicyclopentadiene-based resin (softeningpoint: 125° C.) as a tackifier were added, and 20 g of a multifunctionalacryl monomer (TMPTA) and 1 g of a photoinitiator were diluted withtoluene to have a solid content of approximately 25 wt %. The moistureadsorbent solution previously prepared was mixed thereto to homogenize.

(2) Manufacture of Film

An encapsulating layer was formed to have a thickness of 40 μm bycoating the previously prepared solution on a releasing surface ofreleasing PET and drying the coated surface at 110° C. for 10 minutes.An encapsulation film was manufactured by laminating the encapsulatinglayer on a Cu side of a 12 μm copper film one side of which is coatedwith 15 μm polyimide, and wooden-pattern punching the laminated productin a size to be tested. Here, the punching was performed on thereleasing PET surface on which the encapsulating layer was formed.

(3) Manufacture of OED

The encapsulation film manufactured as described in (1) was thermallylaminated in vacuum on a glass substrate on which an organic electronicdiode was deposited, and aged in an oven at 100° C. for 1 hour.

Example 2

An encapsulating layer was formed to have a thickness of 40 μm bycoating the solution previously prepared in Example 1 on a releasingsurface of releasing PET and drying the coated surface at 110° C. for 10minutes.

An encapsulation film was manufactured by laminating the encapsulatinglayer on a Cu side of a 12 μm copper film one side of which is coatedwith 15 μm polyimide, and wooden-pattern punching the laminated productin a size to be tested. Here, the punching was performed on a metalside. Except these, the process was performed as described in Example 1.

Comparative Example 1

An encapsulation film was manufactured by the same method as describedin Example 1, except that 200 g of a silane-modified epoxy resin(KSR-177, Kukdo Chemical Co., Ltd.) and 150 g of a phenoxy resin (YP-50,Tohto Kasei Co., Ltd.) were added to a reaction vessel at roomtemperature, and diluted with methylethylketone (MEK), and a first layersolution was prepared by adding 4 g of imidazole (Shikoku Chemicals Co.,Ltd.) as a curing agent to the homogenized solution, and stirring theresulting solution at a high speed for 1 hour.

An encapsulating layer was formed to have a thickness of 40 μm bycoating the previously prepared solution on a releasing surface ofreleasing PET and drying the coated surface at 110° C. for 10 minutes.Each of the encapsulating layer and the copper thin film used in Example1 was punched in a size of 5 cm×5 cm, and the encapsulating layer wasthermally laminated on a cooper side of the copper thin film sample.Failures due to a tolerance generated in the lamination were evaluated.

Comparative Example 2

A moisture adsorbent solution was prepared by adding 100 g of calcineddolomite as a moisture adsorbent and toluene as a solvent to have asolid content of 50 wt %. 200 g of a silane-modified epoxy resin(KSR-177, Kukdo Chemical Co., Ltd.) and 150 g of a phenoxy resin (YP-50,Tohto Kasei Co., Ltd.) were added to a reaction vessel at roomtemperature, and diluted with MEK. A solution for a moisture barrierlayer was prepared by adding 4 g of imidazole (Shikoku Chemicals Co.,Ltd.) as a curing agent to the homogenized solution, and stirring theresulting solution at a high speed for 1 hour. A solution for a secondlayer was prepared by adding the previously prepared moisture adsorbentsolution to the solution for a moisture barrier layer to have a contentof the calcined dolomite of 50 parts by weight relative to 100 parts byweight of the encapsulating resin of the second layer. An encapsulationfilm was manufactured by the same method as described in Example 1,except that an encapsulating layer was formed only of the second layer.

Comparative Example 3

An encapsulation film was manufactured by the same method as describedin Example 1, except that 50 g of a polyisobutene resin (weight averagemolecular weight: 450,000) as an encapsulating resin of an encapsulatinglayer and 60 g of a hydrogenated dicyclopentadiene-based resin(softening point: 125° C.) as a tackifier were added into a reactionvessel at room temperature, and diluted with toluene to have a solidcontent of approximately 30 wt %.

1. Measurement of Tolerance d Between Metal Layer and EncapsulatingLayer

When an encapsulation film including a metal layer and an encapsulatinglayer was applied to an organic electronic diode, a difference indistance between the metal layer and the encapsulating layer wasmeasured. When the metal layer was longer, it was represented as (+),and when the encapsulating layer was longer, it was represented as (−).

2. Process Failure

Throughout a process of removing a release film of an encapsulationfilm, and a process of laminating the encapsulation film on an organicelectronic diode, when failure of removing the release film orcontamination of laminating equipment due to the encapsulating layeroccurred, it was represented as O.

3. High Temperature and High Humidity Reliability

A sample was manufactured by laminating the film manufactured in theExample or Comparative Example on a cover substrate, and thermalpressing the resulting substrate on a substrate in which Ca wasdeposited on a center 3 mm inside from the outermost glass. Afterward,the sample was maintained in a constant temperature and constanthumidity chamber at 85° C. and a relative humidity of 85% forapproximately 300 hours. When the sample became transparent due tooxidation of calcium, it was represented as X, and when the sample wasnot transparent, it was represented as O.

TABLE 1 Compar- Compar- ative Comparative ative Example 1 Example 2Example 1 Example 2 Example 3 Tolerance (+)50 μm (−)50 μm (+)700 μm (+)1mm (−)500 μm |d| Process none none none none fail failure Reliability ◯◯ X X X

DESCRIPTION OF REFERENCE NUMERALS

-   -   12: encapsulating layer        -   12 a: a first layer        -   12 b: a second layer    -   13: metal layer    -   14: encapsulation film    -   21: substrate    -   22: organic electronic device

What is claimed is:
 1. An organic electronic device (OED), comprising: asubstrate; an organic electronic diode formed on the substrate; and anencapsulation film comprising an encapsulating layer which comprises anencapsulating resin and a grinded moisture adsorbent and whichencapsulates an entire surface of the organic electronic diode, and ametal-containing layer formed on the encapsulating layer, of which adimension tolerance (d) between the metal-containing layer and theencapsulating layer of the encapsulation film satisfies Equation 1:|d|≤200 μm  [Equation 1] wherein d is a difference in distance betweenan arbitrary side surface of the metal-containing layer and a sidesurface of the encapsulating layer corresponding to the arbitrary sidesurface of the metal-containing layer, wherein the grinded moistureadsorbent is a powderized moisture adsorbent formed by a grindingprocess, wherein the encapsulating layer has a tensile modulus of 0.001to 500 MPa at room temperature, and wherein the grinded moistureadsorbent is included in the encapsulating layer.
 2. The organicelectronic device according to claim 1, wherein the metal-containinglayer has a thermal conductivity of 50 W/mK or more.
 3. The organicelectronic device according to claim 1, wherein the metal-containinglayer comprises any one of a metal oxide, a metal nitride, a metalcarbide, a metal oxynitride, a metal oxyboride, and a mixture thereof.4. The organic electronic device according to claim 3, wherein themetal-containing layer comprises any one of silicon oxide, aluminumoxide, titanium oxide, indium oxide, tin oxide, indium tin oxide,tantalum oxide, zirconium oxide, niobium oxide, and a mixture thereof.5. The organic electronic device according to claim 1, wherein themetal-containing layer further comprises a base substrate.
 6. Theorganic electronic device according to claim 5, wherein the basesubstrate is any one of polyethyleneterephthalate,polytetrafluoroethylene, polyethylene, polypropylene, polybutene,polybutadiene, a vinyl chloride copolymer, polyurethane, ethylene-vinylacetate, an ethylene-propylene copolymer, an ethylene-ethyl acrylatecopolymer, an ethylene-methyl acrylate copolymer, polyimide, nylon, anda combination thereof.
 7. The organic electronic device according toclaim 1, wherein the encapsulating layer includes a first layer having atensile modulus of 0.001 to 500 MPa at room temperature, and a secondlayer having a tensile modulus of 200 to 1000 MPa at room temperature.8. The organic electronic device according to claim 1, wherein theencapsulating resin is a styrene-based resin, a polyolefin-based resin,a thermoplastic elastomer, a polyoxyalkylene-based resin, apolyester-based resin, a polyvinylchloride-based resin, apolycarbonate-based resin, a polyphenylenesulfide-based resin, a mixtureof hydrocarbon, a polyamide-based resin, an acrylate-based resin, anepoxy-based resin, a silicon-based resin, a fluorine-based resin, or amixture thereof.
 9. The organic electronic device according to claim 1,wherein the encapsulating resin comprises a curable resin.
 10. Theorganic electronic device according to claim 9, wherein the curableresin comprises at least one curable functional group selected from aglycidyl group, an isocyanate group, a hydroxy group, a carboxyl group,an amide group, an epoxide group, a cyclic ether group, a sulfide group,an acetal group, and a lactone group.
 11. The organic electronic deviceaccording to claim 9, wherein the curable resin is an epoxy resincomprising a cyclic structure in a molecular structure.
 12. The organicelectronic device according to claim 9, wherein the curable resin is asilane-modified epoxy resin.
 13. The organic electronic device accordingto claim 1, wherein the organic electronic diode is an organic lightemitting diode.
 14. The organic electronic device according to claim 1,wherein the encapsulating layer is a single layer or at least twolayers.
 15. The organic electronic device according to claim 14, whereinwhen the encapsulating layer is formed of at least two layers, at leastone layer has a tensile modulus of 0.001 to 500 MPa at room temperature.16. A method of manufacturing an organic electronic device, comprising:applying an encapsulation film comprising an encapsulating layercomprising an encapsulating resin and a grinded moisture adsorbent, anda metal-containing layer formed on the encapsulating layer to asubstrate on which an organic electronic diode is formed to encapsulatean entire surface of the organic electronic diode, wherein theencapsulating layer has a tensile modulus of 0.001 to 500 MPa at roomtemperature, and wherein the grinded moisture adsorbent is included inthe encapsulating layer; and curing the encapsulating layer of theencapsulation film, wherein the grinded moisture adsorbent is apowderized moisture adsorbent formed by a grinding process, wherein adimension tolerance (d) between the metal-containing layer and theencapsulating layer of the encapsulation film satisfies Equation 1:|d|≤200 μm  [Equation 1] wherein d is a difference in distance betweenan arbitrary side surface of the metal-containing layer and a sidesurface of the encapsulating layer corresponding to the arbitrary sidesurface of the metal-containing layer.
 17. The method according to claim16, wherein the encapsulating layer of the encapsulation film covers theentire surface of the organic electronic diode.